Using the photoluminescence Auger saturation phenomenon, we deduce the valu
es of the absorption cross section of silicon nanocrystals in a wide range
of energies. The very large variation of their values versus energy of the
absorbed light is attributed to the enhanced optical transition oscillator
strength but reduced density of electronic states towards higher confinemen
t energies. The overall spectral behavior of the absorption cross section r
eflects the indirect-gap nature of silicon nanocrystals.