Magnetic-field-induced charged exciton studies in a GaAs/Al0.3Ga0.7As single heterojunction

Authors
Kim, Y Munteanu, FM Perry, CH Rickel, DG Simmons, JA Reno, JL
Citation
Y. Kim et al., Magnetic-field-induced charged exciton studies in a GaAs/Al0.3Ga0.7As single heterojunction, PHYS REV B, 61(7), 2000, pp. 4492-4495
Citations number
18
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B
ISSN journal
10980121 → ACNP
Volume
61
Issue
7
Year of publication
2000
Pages
4492 - 4495
Database
ISI
SICI code
1098-0121(20000215)61:7<4492:MCESIA>2.0.ZU;2-I
Abstract
The magnetophotoluminescence (MPL) behavior of a GaAs/Al0.3Ga0.7As single h eterojunction has been investigated to 60 T. We observed negatively charged singlet (X-s(-)) and triples (X-t(-)) exciton states that are formed at hi gh magnetic fields beyond the v=1 quantum Hall state. The variation of the charged exciton binding energies are in good agreement with theoretical pre dictions. The MPL transition intensities for the X-s(-) and X-t(-) states s howed variations (maxima and minima) at the v=1/3 and 1/5 fractional quantu m Hall states as a consequence of a large reduction of electron-hole screen ing at these filling factors.