N. Lin et al., In situ scanning tunneling microscopic and spectroscopic investigation of magnetron-sputtered C and CN thin films, PHYS REV B, 61(7), 2000, pp. 4898-4903
Carbon and carbon nitride films, grown in argon or nitrogen discharges by r
eactive Jc magnetron sputtering of a graphite target, were characterized by
in situ scanning tunneling microscopy. When the growth temperature increas
ed from ambient to 800 degrees C, we observed a topographic evolution of th
e carbon films from an amorphous to a graphitelike structure, and further t
o a distorted-graphitic phase with curved and intersecting basal planes, an
d finally to a surface containing nanotubes and nanodomes. When nitrogen wa
s incorporated into the films, distortion of the graphitic basal planes occ
urred at a lower temperature compared to the pure carbon case. At temperatu
res of similar to 200 degrees C and above, regions of a nongraphitic phase,
containing a high degree of carbon sp(3) bonds were observed. Spatially re
solved tunneling spectroscopic measurements indicated that the band gaps we
re 0, similar to 0-0.6 eV, and similar to 0.4-2.0 eV for graphitelike struc
tures, the distorted-graphitic phase, and the nongraphitic phase, respectiv
ely. Together with ex sial x-ray photoelectron spectroscopy and reflection
electron energy loss spectroscopy measurements, the results suggest that th
e incorporation of nitrogen promotes bending of the graphitic basal planes
and thereby facilitates the formation of three-dimensional covalently bonde
d networks with a high degree of sp(3)-coordinated carbon atoms.