Lattice location and stability of ion implanted Cu in Si

We report on the lattice location of ion implanted Cu in Si using the emiss ion channeling technique. The angular distribution of beta(-) particles emi tted by the radioactive isotope Cu-67 was monitored following room temperat ure implantation into Si single crystals and annealing up to 600 degrees C. The majority of Cu was found close to substitutional sites, however, with a significant displacement, most likely 0.50(8) Angstrom along the [111] di rections towards the bond center position. The activation energy for the di ssociation of near-substitutional Cu is estimated to be 1.8-2.2 eV.