Wetting and molecular orientation of 8CB on silicon substrates

Citation
L. Xu et al., Wetting and molecular orientation of 8CB on silicon substrates, PHYS REV L, 84(7), 2000, pp. 1519-1522
Citations number
19
Categorie Soggetti
Physics
Journal title
PHYSICAL REVIEW LETTERS
ISSN journal
00319007 → ACNP
Volume
84
Issue
7
Year of publication
2000
Pages
1519 - 1522
Database
ISI
SICI code
0031-9007(20000214)84:7<1519:WAMOO8>2.0.ZU;2-2
Abstract
The wetting properties of 8CB (4'-n-octyl-4-cyanobiphenyl) on silicon wafer s have been studied with scanning polarization force microscopy (SPFM). Lay er-by-layer spreading of 8CB droplets is observed. With the help of the sur face potential mapping capability of SPFM, we found that the molecular dipo le of the first monolayer of 8CB is parallel to the surface. A layer of nea rly Vertical molecular dimers on top of the monolayer has an associated sur face potential of 40 mV, which is attributed to a distortion of the dimer. The dimer distortion propagates to the subsequent smectic bilayers, produci ng an additional 7 mV potential increase in the second layer, 2 mV on the t hird, and similar to 1 mV on the fourth.