Coulomb gap: How a metal film becomes an insulator

Citation
Vy. Butko et al., Coulomb gap: How a metal film becomes an insulator, PHYS REV L, 84(7), 2000, pp. 1543-1546
Citations number
24
Categorie Soggetti
Physics
Journal title
PHYSICAL REVIEW LETTERS
ISSN journal
00319007 → ACNP
Volume
84
Issue
7
Year of publication
2000
Pages
1543 - 1546
Database
ISI
SICI code
0031-9007(20000214)84:7<1543:CGHAMF>2.0.ZU;2-T
Abstract
Electron tunneling measurements of the density of states (DOS) in ultrathin Be films reveal that a correlation gap mediates their insulating behavior. In films with sheet resistance R < 5000 Ohm the correlation singularity ap pears as the usual perturbative ln(V) zero bias anomaly (ZBA) in the DOS. A s R is increased further, however, the ZBA grows and begins to dominate the DOS spectrum. This evolution continues until a nonperturbative \V\ Efros-S hklovskii Coulomb gap spectrum finally emerges in the highest R films. Tran sport measurements of films which display this gap are well described by a universal variable range hopping law R(T) = (h/2e(2)) exp(T-0/T)(1/2).