The preparation of high quality ZnO/Si substrates for the growth of GaN blu
e light emitting materials is considered. ZnO thin films have been deposite
d on Si(100) and Si(lll) substrates by conventional magnetron sputtering. M
orphology, crystallinity and c-axis preferred orientation of ZnO thin films
have been investigated by transmitting electron microscopy (TEM), X-ray di
ffraction (XRD) and X-ray rocking curve (XRC). It is proved that the ZnO th
in films have perfect structure. The full-width-at-half-maximum (FWHM) of t
he ZnO(002) XRC of these films is about 1 degrees, while the minimum is 0.3
53 degrees. This result is better than the minimum FWHM (about 2 degrees) r
eported by other research groups. Moreover, comparison and discussion are g
iven on film structure of ZnO/Si(100) and ZnO/Si(lll).