Sputtering of ZnO buffer layer on Si for GaN blue light emitting materials

The preparation of high quality ZnO/Si substrates for the growth of GaN blu e light emitting materials is considered. ZnO thin films have been deposite d on Si(100) and Si(lll) substrates by conventional magnetron sputtering. M orphology, crystallinity and c-axis preferred orientation of ZnO thin films have been investigated by transmitting electron microscopy (TEM), X-ray di ffraction (XRD) and X-ray rocking curve (XRC). It is proved that the ZnO th in films have perfect structure. The full-width-at-half-maximum (FWHM) of t he ZnO(002) XRC of these films is about 1 degrees, while the minimum is 0.3 53 degrees. This result is better than the minimum FWHM (about 2 degrees) r eported by other research groups. Moreover, comparison and discussion are g iven on film structure of ZnO/Si(100) and ZnO/Si(lll).