Preparation of 4H-SiC BSIT and qualitative comparison with Si BSIT

The SiC static induction transistor (SIT) has been demonstrated and has sho wn an excellent performance in high-power and ultrahigh-frequency fields. N ow a bipolar SIT (BSIT), which is made from silicon carbide, is reported on in this work. The process of the 4H-SiC BSIT's fabrication is listed, too. Moreover, the electrical and thermal properties of the 4H-SiC BSIT are dis cussed. To exhibit the 4H-SiC BSIT's superior properties, it is compared wi th a silicon device and it has been deduced that the most prominent adjustm ent in structure is the base depth. Some differences in the properties exhi bited can be attributed to the adjustment of base depth and they are explai ned in detail.