The gyromagnetic ratio of the compensating donor centre in nitrogen-doped ZnSxSe1-x

Citation
K. Ogata et al., The gyromagnetic ratio of the compensating donor centre in nitrogen-doped ZnSxSe1-x, SEMIC SCI T, 15(2), 2000, pp. 209-213
Citations number
43
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
ISSN journal
02681242 → ACNP
Volume
15
Issue
2
Year of publication
2000
Pages
209 - 213
Database
ISI
SICI code
0268-1242(200002)15:2<209:TGROTC>2.0.ZU;2-#
Abstract
The nature of the so-called deep donor that appears at a depth of about 50 meV when ZnSe is doped with nitrogen remains a matter of controversy. The c entre is of considerable importance since it appears to act as a compensati ng centre which is (at least in part) responsible for the difficulties of o btaining effective acceptor concentrations in excess of 10(18) cm(-3). Seve ral models have been suggested, the most favoured of which is that of a sel enium vacancy associated with a substitutional nitrogen. However, although very recent total energy calculations support such a model, no conclusive e vidence for this identification exists. Electrons trapped by the centre hav e a gyromagnetic ratio of 1.38, in contrast to the value of 1.11 for electr ons bound at the normal, shallow (26 meV) donors in this material. In order to obtain a better understanding of the centre, we have used spin-flip Ram an scattering experiments to determine how this g-value depends on composit ion in the nitrogen-doped ternary alloy ZnSxSe1-x, for x in the range 0 to 0.1. Surprisingly, we find that the g-value remains constant, in contrast t o that for the shallow donors, which increases by 0.12 over the same compos ition range. The results present a significant challenge for theoretical ca lculation, since any microscopic model has to be reconciled with this invar iance.