Binding energy of excitons in symmetric and asymmetric coupled double quantum wells in a uniform magnetic field

The binding energy of excitons in symmetric and asymmetric coupled double G aAs/Ga1-xAlxAs quantum wells is calculated by using a variational approach. The results have been obtained in the presence of a uniform magnetic field , as a function of the potential symmetry, size of the quantum well and cou pling parameter of the wells. We show that by increasing the applied magnet ic field one can obtain large binding between electrons and holes which is similar to the change in the dimensions of the structure. This behaviour in the excitonic binding for different wells and barrier geometries can be us ed to study these systems in regions of interest, without the need for the growth of many different samples.