Temperature effect of a-Si : H pH-ISFET

In this article, the hydrogenated amorphous silicon (a-Si:H) acted as the s ensitive membrane of pH-ISFET. The a-Si:H membrane was deposited by plasma- enhanced chemical vapor deposition (PECVD). In our experiment, we use a Kei thley 236 Semiconductor Parameter Analyzer to measure the drain-source curr ent (I-DS) vs. gate voltage (V-G) curve of a-Si:H ISFET over a pH range fro m 1 to 7 and a temperature range from 25 degrees C to 65 degrees C. Accordi ng to our experimental results, we can observe that the pH sensitivity of a -Si:H ISFET is proportional to the operating temperature. And then, we can also find that the temperature coefficient of a-Si:H ISFET is proportional to the pH value of buffer solution. (C) 2000 Elsevier Science S.A. All righ ts reserved.