Study and simulation of the drift behaviour of hydrogenated amorphous silicon gate pH-ISFET

The drift behaviour of hydrogenated amorphous silicon (a-Si:H) gate pH-ISFE T has been simulated using multiple time-constant model. According to the m ultiple time-constant model, we obtained the pH-response curve with three t ime constants and the drift rate from this curve after the end of slow resp onse. In addition, we have measured the drift effect of a-Si:H gate at diff erent pH values and different temperatures at pH 3. Based on experimental r esults, we can obtain the drift and temperature coefficient for a-Si:H gate pH-ISFET, then we can get the drift rate of a-Si:H gate pH-ISFET as a func tion of temperature. (C) 2000 Elsevier Science S.A. All rights reserved.