Electron dynamics at a Ag/C-60 metal-semiconductor interface

The dynamics of excited electrons in C-60 for various film thicknesses down to approximately one monolayer have been investigated. Using time resolved two photon photoemission this gives a direct probe both for the electronic structure of the normally unoccupied states and the population and depopul ation of these states. It is shown that the relaxation mechanism at the met al-semiconductor interface is quite different from the relaxation observed in the bulk of C-60 (C) 2000 Elsevier Science Ltd. All rights reserved.