Due to possible technological applications in opto-electronic devices, the
interest in characterizing porous silicon structure patterns has recently i
ncreased. From scanning force microscopy (SFM) we have obtained images of d
ifferent samples of porous silicon and applied pattern characterization ope
rators on these matrices. Tn this paper, asymmetric spatial fragmentation i
n amplitude envelopes of porous silicon samples are characterized by means
of a parameter that quantifies the amount of spatial asymmetry in the gradi
ent field. The results show that this method is well suited to characterize
silicon porosity quantitatively. (C) 2000 Elsevier Science Ltd. All rights
reserved.