Effect of oxygen plasma on the electrical characteristics of GaAs MESFETs

Authors
Kumar, V Baby, A Dhanavantri, C Singh, JK Singh, BR
Citation
V. Kumar et al., Effect of oxygen plasma on the electrical characteristics of GaAs MESFETs, SOL ST ELEC, 44(3), 2000, pp. 447-450
Citations number
8
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Eletrical & Eletronics Engineeing
Journal title
SOLID-STATE ELECTRONICS
ISSN journal
00381101 → ACNP
Volume
44
Issue
3
Year of publication
2000
Pages
447 - 450
Database
ISI
SICI code
0038-1101(200003)44:3<447:EOOPOT>2.0.ZU;2-H
Abstract
Plasma induced damage often degrades the electrical and optical performance of the compound semiconductor based microwave/photonics devices and circui ts. We have investigated the effect of oxygen plasma on the performance deg radation of GaAs MESFETs, as measured by changes in breakdown voltage, satu ration current, channel resistance, drift mobility etc. The performance deg radation of the device is attributed to reduction of carrier mobility in th e material due to ion bombardment. (C) 2000 Elsevier Science Ltd. All right s reserved.