Plasma-induced band edge shifts in 3C-, 2H-, 4H-, 6H-SiC and Si

Plasma-induced energy shifts of the conduction band minimum and of the vale nce band maximum have been calculated for 3C-, 2H-, 4H-, 6H-, 6H-SiC and Si . The resulting narrowing of the fundamental band gap and of the optical ba nd gap are presented. The method utilized is based on a zero-temperature fo rmalism within the random phase approximation. Electron-electron, hole-hole , electron-hole, electron-optical phonon and hole-optical phonon interactio ns have been taken into account. The calculations are based on band structu re data from a relativistic, full-potential band structure calculation. (C) 2000 Elsevier Science Ltd. All rights reserved.