Pseudopotential calculations of electronic properties of Ga1-xInxN alloys with zinc-blende structure

This paper is concerned with the pseudopotential investigation of the elect ronic band structure and its related quantities for zinc-blende Ga1-xInxN a lloys. Our results for the important direct and indirect band-gap energies, electron effective masses and antisymmetric gaps for GaN and InN agree wel l with the available experimental data. Attention has also been paid to the effect of alloy disorder on the electronic properties of Ga1-xInxN semicon ductor alloys. For this purpose, the compositional disorder is added to the virtual crystal approximation as an effective potential. Such correction i mproves significantly the value of the band-gap bowing parameters in Ga1-xI nxN alloys. (C) 2000 Elsevier Science Ltd. All rights reserved.