The effect of carbon content on the minority carrier lifetime in lattice-matched p(+)-Si/p-SiGeC/n-Si/n(+)-Si diodes

Authors
Shivaram, R Niu, GF Cressler, JD Croke, ET
Citation
R. Shivaram et al., The effect of carbon content on the minority carrier lifetime in lattice-matched p(+)-Si/p-SiGeC/n-Si/n(+)-Si diodes, SOL ST ELEC, 44(3), 2000, pp. 559-563
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Eletrical & Eletronics Engineeing
Journal title
SOLID-STATE ELECTRONICS
ISSN journal
00381101 → ACNP
Volume
44
Issue
3
Year of publication
2000
Pages
559 - 563
Database
ISI
SICI code
0038-1101(200003)44:3<559:TEOCCO>2.0.ZU;2-I
Abstract
We investigate the effect of carbon content on the minority carrier lifetim e in lattice-matched SiGeC diode structures grown by MBE. A new technique r ecently proposed by Cerdeira and Estrada ([5], Cerdeira A, Estrada M. Solid -State Electronics 1997;42:727) is used to extract lifetimes in the fabrica ted samples. The observed nondegradation of lifetime with the addition of c arbon is an important result, suggesting the potential usefulness of SiGeC alloys in high speed device applications. (C) 2000 Elsevier Science Ltd. Al l rights reserved.