Exciton binding energies in GaN/AlxGa1-xN pseudomorphic quantum wells

Interband transitions of pseudomorphic GaN/AlxGa1- x N quantum wells are an alysed theoretically with respect to the piezoelectric field utilizing a 6 x 6 Rashba-Sheka-Pikus (RSP) Hamiltonian. Band structure modifications due to the built-in Stark effect explain a shift of the emission peak in GaN/Al 0.15Ga0.85N of up to 400 meV. Quantum well exciton binding energies are cal culated by the variational method and are discussed in terms of spatial sep aration of electrons and holes by the built-in electric field, as well as t he interaction between valence subbands. (C) 2000 Academic Press.