Investigation of thin films of the Cu-In and CuInS2 system

Citation
M. Gossla et al., Investigation of thin films of the Cu-In and CuInS2 system, THIN SOL FI, 361, 2000, pp. 56-60
Citations number
11
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
THIN SOLID FILMS
ISSN journal
00406090 → ACNP
Volume
361
Year of publication
2000
Pages
56 - 60
Database
ISI
SICI code
0040-6090(20000221)361:<56:IOTFOT>2.0.ZU;2-1
Abstract
Phase formation processes in coevaporated CuIn-films (precursors). and the formation of CuInS2 from these precursors by reactive annealing were invest igated. Precursors were produced by simultaneous thermal evaporation of the elements onto neat glass substrates. The Cu-In precursors were sulfurized in a diluted H2S/H-2 atmosphere at various H2S concentrations. Subsequently , the formation of CuInS2 was studied after both incomplete and complete su lfurization. The films were characterized by means of Rutherford backscatte ring spectroscopy (RBS), X-ray diffraction (XRD) and scanning electron micr oscopy (SEM). The analysis of the XRD data was carried out by a RIETVELD ty pe algorithm. It was found that next to composition and morphology of the p recursors, the concentration of H2S in the reactive atmosphere is a signifi cant parameter for the formation process and the microstructure of the resu lting CuInS2 films. (C) 2000 Elsevier Science S.A. All rights reserved.