Electrodeposition of epitaxial CdSe on (111) gallium arsenide

Authors
Cachet, H Cortes, R Froment, M Etcheberry, A
Citation
H. Cachet et al., Electrodeposition of epitaxial CdSe on (111) gallium arsenide, THIN SOL FI, 361, 2000, pp. 84-87
Citations number
11
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
THIN SOLID FILMS
ISSN journal
00406090 → ACNP
Volume
361
Year of publication
2000
Pages
84 - 87
Database
ISI
SICI code
0040-6090(20000221)361:<84:EOECO(>2.0.ZU;2-1
Abstract
Epitaxial growth of CdSe has been achieved on GaAs(111) by electrodepositio n from an aqueous electrolyte. The structure of the film corresponds to the cubic modification of CdSe. The quality of epitaxy has been investigated b y reflection high energy electron diffraction, transmission electron micros copy and X-ray diffraction techniques. By XPS measurements the chemistry of the CdSe/GaAs interface and the composition of CdSe are determined. (C) 20 00 Elsevier Science S.A. All rights reserved.