Time-dependent changes of electrical properties are investigated in the ran
ge of relative low heating temperatures (T = 320 to 450 K) for undoped p-Cd
Te grown by various methods. It is established that the character and direc
tion of the observed changes depend on the level of uncontrolled impurities
(Cu preferably), their charge state and the association degree of impuriti
es with intrinsic (V-Cd) defects. CdTe:Ge (Sn,Pb) crystals are characterize
d with a high thermostability of electrical properties. (C) 2000 Elsevier S
cience S.A. All rights reserved.