Lateral inhomogeneities of Cu(In,Ga)Se-2 absorber films

Citation
D. Eich et al., Lateral inhomogeneities of Cu(In,Ga)Se-2 absorber films, THIN SOL FI, 361, 2000, pp. 258-262
Citations number
8
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
THIN SOLID FILMS
ISSN journal
00406090 → ACNP
Volume
361
Year of publication
2000
Pages
258 - 262
Database
ISI
SICI code
0040-6090(20000221)361:<258:LIOCAF>2.0.ZU;2-R
Abstract
Scanning tunneling microscopy (STM) under laser illumination and microspot X-ray photoelectron spectroscopy (micro-ESCA) have been utilized to study t he local variation of the photovoltaic properties and of the stoichiometry of Cu(In,Ga)Se-2 (CIGS) thin film solar cell absorbers. The STM results cle arly demonstrate that the photovoltaic quantities like the local surface ph otovoltage (SPV) and photoinduced tunneling current (PITC) vary significant ly between different grains. This observation is in accordance with the loc al variation of the chemical composition of CIGS absorber films derived by micro-ESCA. In addition, the (local) photoelectric parameters vary with exp osure time to red light. in agreement with recently reported metastability effects. (C) 2000 Elsevier Science S.A. All rights reserved.