Different equivalent circuit models were used to fit the impedance spectra
of CdTe solar cells at fixed d.c.-voltages and the resulting C-V (capacitan
ce-voltage)-curves and C-S (capacitance-frequency)-curves were analysed. A
simplified equivalent circuit model, which consists of a parallel resistor
R-p and capacitor C in series with a resistor R-s, does not give a good fit
to the experimental data and is not capable of simulating the: dispersive
trend. Also the commonly assumed model for CdTe, which consist of two sub-c
ircuits (R-p and C) does not allow the simulation of the measured impedance
spectra. As both models are only consisting of frequency-independent circu
it elements they can not be used to describe the frequency dispersion of th
in film CdTe solar cells. A phenomenological description of the capacitance
behaviour was obtained by replacing the capacitor of the first model by a
frequency-dependent non-ideal capacitor, a so-called constant phase element
(CPE). This element is described by the two CPE-parameters (T and P). A co
rrelation of these parameters to the capacitance dispersion and to the real
cell capacitance are presented and the physical phenomena responsible for
the capacitance dispersion are discussed. (C) 2000 Elsevier Science S.A. Al
l rights reserved.