Self-limitation of Na content at the CdS/Cu(In,Ga)Se-2 solar cell heterojunction

Citation
C. Heske et al., Self-limitation of Na content at the CdS/Cu(In,Ga)Se-2 solar cell heterojunction, THIN SOL FI, 361, 2000, pp. 360-363
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
THIN SOLID FILMS
ISSN journal
00406090 → ACNP
Volume
361
Year of publication
2000
Pages
360 - 363
Database
ISI
SICI code
0040-6090(20000221)361:<360:SONCAT>2.0.ZU;2-2
Abstract
The localization of Na impurities at the buried heterojunction of CdS/Cu(In ,Ga)Se: thin film solar cells has been studied by photoelectron spectroscop y and X-ray emission spectroscopy. This combination of a surface- and a bul k-sensitive technique allows to identify the localization of impurities at a buried interface in a non-destructive. semi-quantitative. and element-spe cific way. We compare samples with increasing CdS-overlayer thickness on (a a CIGS film with nominal Na content and (b) a Na-lich CIGS film. The data clearly indicate a self-limitation of the Na content at this interface. The consequences are discussed in view of the possibility to tailor the electr onic structure of the buried heterojunction by controlling the nominal Na c ontent in the CIGS film. (C) 2000 Elsevier science S.A. All rights reserved .