The localization of Na impurities at the buried heterojunction of CdS/Cu(In
,Ga)Se: thin film solar cells has been studied by photoelectron spectroscop
y and X-ray emission spectroscopy. This combination of a surface- and a bul
k-sensitive technique allows to identify the localization of impurities at
a buried interface in a non-destructive. semi-quantitative. and element-spe
cific way. We compare samples with increasing CdS-overlayer thickness on (a
a CIGS film with nominal Na content and (b) a Na-lich CIGS film. The data
clearly indicate a self-limitation of the Na content at this interface. The
consequences are discussed in view of the possibility to tailor the electr
onic structure of the buried heterojunction by controlling the nominal Na c
ontent in the CIGS film. (C) 2000 Elsevier science S.A. All rights reserved
.