15.4% CuIn1-xGaxSe2-based photovoltaic cells from solution-based precursorfilms

We have fabricated 15.4%- and 12.4%-efficient CuIn1-xGaxSe2 (CIGS)-based ph otovoltaic devices from solution-based electrodeposition (ED) and electrole ss-deposition (EL) precursors. As-deposited precursors are Cu-rich CIGS. Ad ditional In. Ga, and Se are added to the ED and EL precursor films by physi cal vapor deposition (PVD) to adjust the final film composition to CuIn1-xG axSe2. The ED and EL device parameters are compared with those of a recent world record, an 18.8%-efficient PVD device. The tools used for comparison are current voltage. capacitance voltage and spectral response characterist ics. (C) 2000 Elsevier Science S.A. All lights reserved.