Calculation and experimental characterization of the defect physics in CuInSe2

Numerical simulations of the defect distribution of CuInSe2 were carried ou t as a function of the stoichiometry. The simulations are based on a new ca lculation of the intrinsic defects in this material. The results of the cal culations were compared with earlier electrical and positron lifetime measu rements. This leads to the assumption, that the single defects V-Se, V-Cu, Cu-1n and the defect pair (2V(Cu)-In-Cu) occur in the investigated specimen s in considerable concentrations. (C) 2000 Elsevier Science S.A. All rights reserved.