Processes for chalcopyrite-based solar cells

Citation
Mc. Lux-steiner et al., Processes for chalcopyrite-based solar cells, THIN SOL FI, 361, 2000, pp. 533-539
Citations number
12
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
THIN SOLID FILMS
ISSN journal
00406090 → ACNP
Volume
361
Year of publication
2000
Pages
533 - 539
Database
ISI
SICI code
0040-6090(20000221)361:<533:PFCSC>2.0.ZU;2-4
Abstract
This contribution deals with the investigations of chalcopyrite solar cells . Main attention is paid to absorber materials with band gaps larger than 1 .5 eV. Besides the different efforts to modify and optimise stoichiometric CuInS2 films, novel deposition technologies for CuGaSe2 films and buffer la yers as well as alternative buffer layers were studied and compared. With Z nSe as alternative buffer layer on Cu(InGa)(S,Se)(2) absorbers developed by SSI Camarillo and Siemens Solar, Munich, total area efficiencies up to 13. 7% and active area efficiencies up to 15.7% could be reached, respectively. For CuInS2 two important results were achieved. The efficiency of Cu-poor CuInS2 cells could be increased to 8.3%. Standard Cu-rich prepared devices led to a new record efficiency of 12.5%. (C) 2000 Elsevier Science S.A. All rights reserved.