Scanning tunneling microscopy nanofabrication of electronic industry compatible thermal Si oxide

We report here a nanofabrication result on a 2.7 nm thermal oxide layer usi ng the low-energy e-beam/scanning tunneling microscope (STM) technique in c onjunction with thermal annealing, in which line windows with average width of 50 nm can be formed. Comparing to the low-energy e-beam processing on t hin layers of native Si oxide, this nanofabrication shows a uniform etching of the electronic industry compatible Si oxide, with which nanoscale trenc hes can be formed. In addition to demonstrating further the nanofabrication capability of this technique on the thermal oxide, the results present cri tical evidence to our previous discussions on the mechanism of the low-ener gy e-beam/STM nanofabrication. (C) 2000 Elsevier Science B.V. All rights re served.