W. Shimada et al., Observations of sudden structural-changes of the faulted-halves of the DASstructure on quenched Si(111) by STM, ULTRAMICROS, 82(1-4), 2000, pp. 103-109
We have carried out scanning tunneling microscopy (STM) observations of unr
econstructed regions on quenched Si(1 1 1) surfaces at 380 degrees C at a s
canning speed of 1.7 s per frame. In the regions, it is found that single f
aulted-halves of the dimer-adatom-stacking-fault (DAS) structure are formed
isolatedly or at the edges of the surrounding DAS domains sharing one corn
er hole. In such "living" regions, we have succeeded to observe sudden stru
ctural changes of the faulted-halves during line scans in single frames of
STM images. (C) 2000 Elsevier Science B.V. All rights reserved.