K. Kaneko et al., Determination of the chemical width of grain boundaries of boron- and carbon-doped hot-pressed beta-SiC by HAADF imaging and ELNES line-profile, ACT MATER, 48(4), 2000, pp. 903-910
A residue of sintering additives is often found at the grain boundaries in
sintered ceramics. This can be used to determine the macroscopic properties
of the sintered polycrystalline materials. A combination of both high-angl
e annular dark-field (HAADF) imaging and energy-loss near edge-structure (E
LNES) line-profile methods was carried out to measure the chemical width of
grain boundaries using the sintering additives. Application of both HRTEM
and HAADF imaging methods for boron- and carbon-doped hot-pressed SiC leads
to the identification of the structural differences either within the matr
ix or at the grain boundaries very clearly. Additionally, EELS analysis was
also carried out to identify the chemistries and bondings at the grain bou
ndaries. The segregation of both boron and nitrogen is clearly shown, as we
ll as the chemical width measured at the grain boundaries by the ELNES line
-profile method. Incorporation of nitrogen within the grain interior was al
so detected by ELNES analysis. (C) 2000 Acta Metallurgica Inc. Published by
Elsevier Science Ltd. All rights reserved.