Determination of the chemical width of grain boundaries of boron- and carbon-doped hot-pressed beta-SiC by HAADF imaging and ELNES line-profile

Citation
K. Kaneko et al., Determination of the chemical width of grain boundaries of boron- and carbon-doped hot-pressed beta-SiC by HAADF imaging and ELNES line-profile, ACT MATER, 48(4), 2000, pp. 903-910
Citations number
26
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science",Metallurgy
Journal title
ACTA MATERIALIA
ISSN journal
13596454 → ACNP
Volume
48
Issue
4
Year of publication
2000
Pages
903 - 910
Database
ISI
SICI code
1359-6454(20000225)48:4<903:DOTCWO>2.0.ZU;2-0
Abstract
A residue of sintering additives is often found at the grain boundaries in sintered ceramics. This can be used to determine the macroscopic properties of the sintered polycrystalline materials. A combination of both high-angl e annular dark-field (HAADF) imaging and energy-loss near edge-structure (E LNES) line-profile methods was carried out to measure the chemical width of grain boundaries using the sintering additives. Application of both HRTEM and HAADF imaging methods for boron- and carbon-doped hot-pressed SiC leads to the identification of the structural differences either within the matr ix or at the grain boundaries very clearly. Additionally, EELS analysis was also carried out to identify the chemistries and bondings at the grain bou ndaries. The segregation of both boron and nitrogen is clearly shown, as we ll as the chemical width measured at the grain boundaries by the ELNES line -profile method. Incorporation of nitrogen within the grain interior was al so detected by ELNES analysis. (C) 2000 Acta Metallurgica Inc. Published by Elsevier Science Ltd. All rights reserved.