The spin-valve transistor - A new magnetoelectronic device

A spin-valve transistor showing high sensitivity at low fields was develope d. A large magnetocurrent, above 500% is realized by a magnetic field chang e of 2 to 4 Oe at 80 K. Hot electrons are injected into the spin-valve laye r through a Si-Pt Schottky diode. These hot electrons, while traversing thr ough the spin-valve, are spin-dependently scattered. Those electrons with r ight energy and momentum are collected by a collector (an Au-Si Schottky di ode) constituting a collector current. The relative orientation of the magn etic layer in the spin-valve is changed by the application of a magnetic fi eld and causes a change in collector current giving a large magnetocurrent.