Login
|
New Account
ITA
ENG
Scattering theory of the Johnson spin transistor
Authors
Geux, LS
Brataas, A
Bauer, GEW
Citation
Ls. Geux et al., Scattering theory of the Johnson spin transistor, ACT PHY P A, 97(1), 2000, pp. 119-128
Citations number
15
Categorie Soggetti
Physics
Journal title
ACTA PHYSICA POLONICA A
ISSN journal
05874246 →
ACNP
Volume
97
Issue
1
Year of publication
2000
Pages
119 - 128
Database
ISI
SICI code
0587-4246(200001)97:1<119:STOTJS>2.0.ZU;2-E
Abstract
We discuss a simple, semiclassical scattering theory for spin-dependent tra nsport in a many-terminal formulation, with special attention to the four t erminal device of Johnson referred to as spin transistor.