Electrical characterisation of short gate In0.60Ga0.40As/In0.36Al0.64As0.84Sb0.16 high electron mobility transistors on InP substrate

Authors
Micovic, M Matloubian, M Hu, M Harvey, DS Nguyen, C Janke, P
Citation
M. Micovic et al., Electrical characterisation of short gate In0.60Ga0.40As/In0.36Al0.64As0.84Sb0.16 high electron mobility transistors on InP substrate, ELECTR LETT, 36(4), 2000, pp. 357-358
Citations number
4
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194 → ACNP
Volume
36
Issue
4
Year of publication
2000
Pages
357 - 358
Database
ISI
SICI code
0013-5194(20000217)36:4<357:ECOSGI>2.0.ZU;2-2
Abstract
An investigation into the DC and RF performance of MBE-grown In0.36Al0.64As 0.84Sb0.16/In0.52Al0.48/In0.60Ga0.40As HEMTs on InP substrate is presented. A composite InAlAsSb Schottky barrier is used to enhance the carrier confi nement in the channel. Devices exhibit a drain current of 850mA/mm, an extr insic g(m) of 1.22S/mm and anf, of 240GHz. This is the highest f(tau) to da te for an InAlAsSb barrier HEMT.