Planar GaAs MOSFET using wet thermally oxidised AlGaAs as gate insulator

Authors
Yu, EF Shen, J Walther, M Lee, TC Zhang, R
Citation
Ef. Yu et al., Planar GaAs MOSFET using wet thermally oxidised AlGaAs as gate insulator, ELECTR LETT, 36(4), 2000, pp. 359-361
Citations number
11
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194 → ACNP
Volume
36
Issue
4
Year of publication
2000
Pages
359 - 361
Database
ISI
SICI code
0013-5194(20000217)36:4<359:PGMUWT>2.0.ZU;2-Z
Abstract
A planar GaAs MOSFET has been realised in which ion implantation is used fo r device isolation and wet thermal oxidation of Al0.98Ga0.02As for both the gate insulation and channel encapsulation. Selective etches of AlGaAs/GaAs and Al2O3/GaAs were incorporated in the device fabrication. The depletion- mode device has a threshold voltage of about -4V, a transconductance of 23. 9mS/mm and a low gate leakage current.