Monolithically integrated 17 and 25GHz SiGe-HBT oscillators are presented.
The monolithic microwave integrated circuits (MMICs) are fabricated using t
he commercially available TEMIC SiGe process. The oscillators deliver 8dBm
output power at 17GHz and 1.2dBm at 25GHz with phase noise < -90dBc/Hz at 1
00kHz offset, which are record values for MMICs on low-resistivity silicon
substrate.