25GHz MMIC oscillator fabricated using commercial SiGe-HBT process

Authors
Kuhnert, H Heinrich, W Schwerzel, W Schuppen, A
Citation
H. Kuhnert et al., 25GHz MMIC oscillator fabricated using commercial SiGe-HBT process, ELECTR LETT, 36(3), 2000, pp. 218-220
Citations number
8
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194 → ACNP
Volume
36
Issue
3
Year of publication
2000
Pages
218 - 220
Database
ISI
SICI code
0013-5194(20000203)36:3<218:2MOFUC>2.0.ZU;2-G
Abstract
Monolithically integrated 17 and 25GHz SiGe-HBT oscillators are presented. The monolithic microwave integrated circuits (MMICs) are fabricated using t he commercially available TEMIC SiGe process. The oscillators deliver 8dBm output power at 17GHz and 1.2dBm at 25GHz with phase noise < -90dBc/Hz at 1 00kHz offset, which are record values for MMICs on low-resistivity silicon substrate.