0.7W in singlemode fibre from 1.48 mu m semiconductor unstable-cavity laser with low-confinement asymmetric epilayer structure

Authors
Delepine, S Gerard, F Fillion, T Pasquier, J Gaborit, F Chardon, JP Boubal, F Salet, P
Citation
S. Delepine et al., 0.7W in singlemode fibre from 1.48 mu m semiconductor unstable-cavity laser with low-confinement asymmetric epilayer structure, ELECTR LETT, 36(3), 2000, pp. 221-223
Citations number
5
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194 → ACNP
Volume
36
Issue
3
Year of publication
2000
Pages
221 - 223
Database
ISI
SICI code
0013-5194(20000203)36:3<221:0ISFF1>2.0.ZU;2-4
Abstract
Applied to 1.48 mu m high-power unstable-cavity lasers, the concept of low modal gain is demonstrated to efficiently repel filamentation effects. enab ling more than 700mW to be coupled in a singlemode fibre from a single semi conductor laser diode.