Citation
Ks. Kim et al., GaAs/AlGaAs quantum well intermixing using buried Al-oxide layer, ELECTR LETT, 36(3), 2000, pp. 246-247
Citations number
6
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194
→ ACNP
Volume
36
Issue
3
Year of publication
2000
Pages
246 - 247
Database
ISI
SICI code
0013-5194(20000203)36:3<246:GQWIUB>2.0.ZU;2-6
Abstract
Using burial wet-oxidised AlxOy layers to enhance impurity free vacancy dif
fusion. the intermixing of GaAs/AlGaAs quantum wells has been achieved A 70
Angstrom thick GaAs quantum well shows a blueshift of 59meV when the sampl
e is annealed at 950 degrees C for 120s. By cathodeluminescence measurement
s. it is confirmed that the bandgap transition region is localised laterall
y within 1 mu m of the oxide/nonoxide interface.