3.3V supply single-voltage-operating double-planar-doped AlGaAs/InGaAs PHEMT with double channel for 1.6GHz digital mobile communications

A 3.3V supply single-voltage AlGaAs/InGaAs PHEMT with double channels has b een developed for CDMA handsets for global mobile personal communication sy stems. The PHEMT has an output power of 24.2dBm (75.2mW/mm output power den sity), 37% power-added efficiency. and a third-order intermodulation distor tion Im el of -30.7dBc under single-voltage operation with a 3.3V drain vol tage and 1.6GHz frequency. The power density is the highest among those rep orted for poser devices operating at a single voltage. The good performance is obtained by incorporating an AlGaAs/GaAs quantum well channel between t he gate and the InGaAs channel.