Low-frequency noise in AlGaN/GaN MOS-HFETs

Authors
Pala, N Gaska, R Rumyantsev, S Shur, MS Khan, MA Hu, X Simin, G Yang, J
Citation
N. Pala et al., Low-frequency noise in AlGaN/GaN MOS-HFETs, ELECTR LETT, 36(3), 2000, pp. 268-270
Citations number
10
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194 → ACNP
Volume
36
Issue
3
Year of publication
2000
Pages
268 - 270
Database
ISI
SICI code
0013-5194(20000203)36:3<268:LNIAM>2.0.ZU;2-T
Abstract
A comparative study is presented of low-frequency noise in GaN-based metal- oxide-semiconductor heterostructure field effect transistors (MOS-HFETs) an d HFETs. The Hooge parameter at zero gate bias was of the order of 10(-3) f or both types of device. Shr AlGaN/GaN MOS-HFETs exhibited extremely low ga te leakage current and much lower noise at both positive and negative gate biases.