A comparative study is presented of low-frequency noise in GaN-based metal-
oxide-semiconductor heterostructure field effect transistors (MOS-HFETs) an
d HFETs. The Hooge parameter at zero gate bias was of the order of 10(-3) f
or both types of device. Shr AlGaN/GaN MOS-HFETs exhibited extremely low ga
te leakage current and much lower noise at both positive and negative gate
biases.