0.15 mu m passivated InP-based HEMT's MMIC technology with high thermal stability in hydrogen ambient

The effect of thermal stress on our InP-based HEMT MMIC with Ti-Pt-Au gate metallization in N-2 and H-2 forming gas is reported. The importance of sta bilization bake at high temperature under nitrogen to stabilize the thresho ld voltage and device parameters will be demonstrated. In addition, through thermal stress at 270 degrees C with hydrogen ambient, we found, that our InP based HEMT's devices and MMICs with Ti-Pt-Au gate metallization are not sensitive to hydrogen. To our knowledge, this is the first demonstration o f hydrogen insensitive FET's and MMIC's with Ti-Pt-Au gate metallization.