1.6 nm oxide equivalent gate dielectrics using nitride/oxide (N/O) composites prepared by RPECVD/oxidation process

Ultrathin nitride/oxide (similar to 1.5/0.7 nm) dual layer gate dielectrics have been formed using remote plasma enhanced CVD of nitride onto plasma-g rown oxide interface layers, High accumulation capacitance (1.72 mu F/cm(2) ) is measured and the equivalent oxide thickness is 1.6 nm after quantum ef fect corrections. Compared to 1.6 nm oxides, a tunneling current reduction of more than 100 fold is found for devices with 1.6 nm N/O dielectrics due to increased film thickness and interface nitridation, Hole channel mobilit y decreases by about 5%, yielding very good P-MOSFET current drive. Excelle nt dielectric reliability and interface robustness are also demonstrated fo r P-MOSFET's with N/O dielectrics.