The effects of substitutional impurities and oxygen vacancies on the electr
onic structure and optical properties of cubic zirconia were studied using
band-structure calculations. It is shown that oxygen vacancies produce addi
tional states near the Fermi level, whereas impurity atoms make an insignif
icant contribution to the states in the valence band and at the bottom of t
he conduction band, and their effect has a predominantly electrostatic char
acter. The mechanisms of the stabilization of the high-temperature ZrO2 pol
ymorphs are elucidated. The calculation results agree well with x-ray photo
electron spectroscopy and optical data.