Pb5Ge3O11 ferroelectric films prepared by a modified sol-gel method

Citation
Pa. Shcheglov et al., Pb5Ge3O11 ferroelectric films prepared by a modified sol-gel method, INORG MATER, 36(1), 2000, pp. 67-71
Citations number
12
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
INORGANIC MATERIALS
ISSN journal
00201685 → ACNP
Volume
36
Issue
1
Year of publication
2000
Pages
67 - 71
Database
ISI
SICI code
0020-1685(200001)36:1<67:PFFPBA>2.0.ZU;2-H
Abstract
Single-crystal Pb5Ge3O11 films 5-105 mu m thick, adhering well to platinum substrates, were prepared by pyrolysis of metalorganic precursors in combin ation with in situ sol-gel processing. The best films consisted of densely packed crystallites ranging in size from 200 to 300 mu m, with hexagonal ha bits. A well-defined ferroelectric transition was revealed at 170-180 degre es C. The typical parameters of the films are epsilon(20) = 30-40, tan delt a congruent to 0.02, epsilon(max) congruent to 200, P-s = 3.2 mu C/cm(2), E -c = 16 kV/cm, and rho = 10(8)-10(9) Omega cm, in agreement (except for eps ilon(max)) with those of lead germanate crystals.