Ferroelectric-gate transistor as a capacitor-less DRAM cell (FEDRAM)

Authors
Han, JP Ma, TP
Citation
Jp. Han et Tp. Ma, Ferroelectric-gate transistor as a capacitor-less DRAM cell (FEDRAM), INTEGR FERR, 27(1-4), 1999, pp. 1053-1062
Citations number
6
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Eletrical & Eletronics Engineeing
Journal title
INTEGRATED FERROELECTRICS
ISSN journal
10584587 → ACNP
Volume
27
Issue
1-4
Year of publication
1999
Pages
1053 - 1062
Database
ISI
SICI code
1058-4587(1999)27:1-4<1053:FTAACD>2.0.ZU;2-N
Abstract
The Metal-Ferroelectric-Insulator-Semiconductor FET structure (or MFISFET) has been studied as a non-volatile memory device(1-4) ever since the IEEE p ublication by Wu(4) in 1974. However, so far there has not been any commerc ial product, because of some severe problems, including interface problems and retention time problem, among others.