Epitaxial BaTiO3 films on silicon for MFSFET applications

Authors
Hallmark, J Yu, ZY Droopad, R Ramdani, J Curless, J Overgaard, C Finder, J Marshall, D Wang, J Ooms, B
Citation
J. Hallmark et al., Epitaxial BaTiO3 films on silicon for MFSFET applications, INTEGR FERR, 27(1-4), 1999, pp. 1085-1094
Citations number
5
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Eletrical & Eletronics Engineeing
Journal title
INTEGRATED FERROELECTRICS
ISSN journal
10584587 → ACNP
Volume
27
Issue
1-4
Year of publication
1999
Pages
1085 - 1094
Database
ISI
SICI code
1058-4587(1999)27:1-4<1085:EBFOSF>2.0.ZU;2-Z
Abstract
Recently, we have grown epitaxial BaTiO3 films directly on a Si (001) subst rate using molecular beam epitaxy (MBE). The films have been characterized both physically (RHEED, XRD, AFM, SE) and electrically (CV & IV). The films show streaky RHEED patterns and sharp X-ray diffraction patterns, indicati ng epitaxial BTO growth. The leakage current is below 1E-8 A/cm2 at 2V. The CV results show good interface properties. The films exhibit a 0.5V hyster esis in the CV curves.