Investigation of preannealing method for preparation of robust SrBi2Ta2O9 thin films by chemical solution deposition

Bismuth layered-perovskite thin films of SrBi2Ta2O9 (SBT) solid solution we re prepared by chemical solution deposition method. In order to form the ro bust SBT thin films, preannealing methods such as rapid thermal annealing ( RTA) and furnace annealing were studied in terms of physical and electrical properties of SBT thin films. SBT thin films preannealed by furnace exhibi ted better surface morphology and electrical properties than those preannea led by RTA. The crystallization mechanism of SBT thin films by heat treatme nt was examined by using X-ray diffraction (XRD) analysis and scanning elec tron micrograph (SEM). For the robust SBT thin films with (P*-P-boolean AND ) value of about 20 mu C/cm(2), leakage current density of less than 10(-7) A/cm(2), and breakdown voltage of 15 V, the optimal condition of furnace p reannealing was found to be 700 degrees C for 30 min.