SBT-based ferroelectric FET for nonvolatile non-destructive read out (NDRO) memory applications

Citation
M. Lim et al., SBT-based ferroelectric FET for nonvolatile non-destructive read out (NDRO) memory applications, INTEGR FERR, 27(1-4), 1999, pp. 1115-1124
Citations number
9
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Eletrical & Eletronics Engineeing
Journal title
INTEGRATED FERROELECTRICS
ISSN journal
10584587 → ACNP
Volume
27
Issue
1-4
Year of publication
1999
Pages
1115 - 1124
Database
ISI
SICI code
1058-4587(1999)27:1-4<1115:SFFFNN>2.0.ZU;2-0
Abstract
SrBi2Ta2O9 based Ferroelectric FETs with a CeO2 buffer layer deposited by M etal Organic Decomposition (MOD) were fabricated on p-Si (100) substrate an d analyzed in detail. The hysterisis curve (drain current vs, gate voltage) of the FET shows the counter-clockwise direction, which demonstrates the c hange of channel conductivity due to the ferroelectric polarization. The me mory window with the gate voltage of +/-10V was 2V. The difference of curre nt ratio of I-ds(on) to I-ds(off) was 5 similar to 7 orders in magnitude wh ich is easily sensed by sense amplifiers. The charges of "on" state stored decay logarithmically with time without severe initial loss of data. This i ndicates the FET-FeRAM can be implemented in NDRO applications.