M. Lim et al., SBT-based ferroelectric FET for nonvolatile non-destructive read out (NDRO) memory applications, INTEGR FERR, 27(1-4), 1999, pp. 1115-1124
SrBi2Ta2O9 based Ferroelectric FETs with a CeO2 buffer layer deposited by M
etal Organic Decomposition (MOD) were fabricated on p-Si (100) substrate an
d analyzed in detail. The hysterisis curve (drain current vs, gate voltage)
of the FET shows the counter-clockwise direction, which demonstrates the c
hange of channel conductivity due to the ferroelectric polarization. The me
mory window with the gate voltage of +/-10V was 2V. The difference of curre
nt ratio of I-ds(on) to I-ds(off) was 5 similar to 7 orders in magnitude wh
ich is easily sensed by sense amplifiers. The charges of "on" state stored
decay logarithmically with time without severe initial loss of data. This i
ndicates the FET-FeRAM can be implemented in NDRO applications.