Advanced LSI embedded with FeRAM for contactless IC cards and its manufacturing technology
Authors
Shimada, Y
Arita, K
Fujii, E
Nasu, T
Nagano, Y
Noma, A
Izutsu, Y
Nakao, K
Tanaka, K
Yamada, T
Uemoto, Y
Asari, K
Nakane, G
Inoue, A
Sumi, T
Nakakuma, T
Chaya, S
Hirano, H
Judai, Y
Sasai, Y
Otsuki, T
Citation
Y. Shimada et al., Advanced LSI embedded with FeRAM for contactless IC cards and its manufacturing technology, INTEGR FERR, 27(1-4), 1999, pp. 1335-1358
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Eletrical & Eletronics Engineeing
Journal title
INTEGRATED FERROELECTRICS
SICI code
1058-4587(1999)27:1-4<1335:ALEWFF>2.0.ZU;2-B
Abstract
High performance LSIs embedded with ferroelectric random access memory (FeR
AM) for contactless IC cards are now commercially available. The emphasis i
s placed on the materials solution with SrBi2(Ta,Nb)(2)O-9 (SBTN) which ena
bles to exploit the potential performance of FeRAMs for composite logic/mic
rocontroller LSIs operating at high speeds and low powers. The leading-edge
0.6-mu m and double-level-metal FeRAM technology produces microcontroller-
embedded LSIs with 14-kbit or 64-kbit FeRAM. A mature 0.8-mu m and single-l
evel-metal process has been built to maximize the die yield. Yields exceedi
ng 90% indicate the excellent process stability. Product qualification data
have proven the robust FeRAM technologies.
