Ferroelectric properties of (PbxLa1-x)(ZryTi1-y)O-3 films prepared by two-step pulsed laser deposition process

Authors
Cheng, HF Liu, KS Chen, YJ Jamn, G Lin, IN
Citation
Hf. Cheng et al., Ferroelectric properties of (PbxLa1-x)(ZryTi1-y)O-3 films prepared by two-step pulsed laser deposition process, INTEGR FERR, 26(1-4), 1999, pp. 703-710
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Eletrical & Eletronics Engineeing
Journal title
INTEGRATED FERROELECTRICS
ISSN journal
10584587 → ACNP
Volume
26
Issue
1-4
Year of publication
1999
Pages
703 - 710
Database
ISI
SICI code
1058-4587(1999)26:1-4<703:FPO(FP>2.0.ZU;2-V
Abstract
A two-step pulsed laser deposition process has been successfully applied fo r growing the (PbxLa1-x)(ZryTi1- (y))O-3, PLZT, thin films. These films exh ibit good ferroelectric characteristics (P-r=18 mu C/cm(2); E-c=80 kV/cm; J (L)less than or equal to 0.2 mu A/cm(2)), whenever crystalline SrRuO3 mater ials were used as buffer layers. However, the electrical properties of PLZT films were markedly degraded whenever the amorphous SrRuO3 or (La0.5Sr0.5) CoO3 layer was used as buffer layer.